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data sheet 1 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 general description the as431 is a three-terminal adjustable shunt regula- tor with guaranteed thermal stability over a full opera- tion range. it feat ures sharp turn-on characteristics, low temperature coefficient and low output impedance, which make it ideal substitute for zener diode in appli- cations such as switching power supply, charger and other adjustable regulators. the output voltage of as431 can be set to any value between v ref (2.5v) and the corresponding maximum cathode voltage (36v). the as431 precision reference is offered in two volt- age tolerance: 0.5% and 1.0%. this ic is available in 4 packages: to-92 (bulk or ammo packing), sot-23, sot-23-5 and sot-89. features programmable precise output voltage from 2.5v to 36v high stability unde r capacitive load low temperature deviation: 4.5mv typical low equivalent full-range temperature coeffi- cient with 20ppm/ o c typical sink current capacity from 1ma to 100ma low output noise wide operating range of -40 to 125 o c applications charger voltage adapter switching power supply graphic card precision voltage reference figure 1. package types of as431 sot-23 sot-89 sot-23-5 to-92(bulk packing) to -92(ammo packing)
data sheet 2 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 figure 2. pin configuration of as431 (top view) figure 3. functional block diagram of as431 functional block diagram ref v ref cathode anode + - pin configuration z package (sot-23) n package r package (sot-89) anode ref ref anode k package (sot-23-5) nc anode ref cathode anode ref 1 2 3 cathode cathode z package cathode anode ref 1 2 3 (to-92(bulk packing)) (to-92(ammo packing)) 3 2 1 1 23 1 2 34 5 note 1: pin 2 is attached to substrate and must be connected to anode or open * * (note 1) cathode
data sheet 3 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 ordering information circuit type voltage tolerance b: 1.0% a: 0.5% e1: lead free as431 - package tr: tape and reel or ammo blank: bulk n: sot-23 k: sot-23-5 r: sot-89 z: to-92 package temperature range voltage tolerance part number marking id packing type lead free green lead free green sot-23 -40 to 125 o c 0.5% as431antr-e1 as431antr-g1 eb5 gb5 tape & reel 1.0% as431bntr-e1 as431bntr-g1 eb6 gb6 tape & reel sot-23-5 -40 to 125 o c 0.5% as431aktr-e1 as431aktr-g1 e6h g6h tape & reel 1.0% as431bktr-e1 as431bktr-g1 e6i g6i tape & reel to-92 -40 to 125 o c 0.5% as431az-e1 AS431AZ-G1 as431az-e1 AS431AZ-G1 bulk 0.5% as431aztr-e1 as431aztr-g1 as431az-e1 AS431AZ-G1 ammo 1.0% as431bz-e1 as431bz-g1 as431bz-e1 as431bz-g1 bulk 1.0% as431bztr-e1 as431bztr-g1 as431bz-e1 as431bz-g1 ammo sot-89 -40 to 125 o c 0.5% as431artr-e1 as431artr-g1 e43g g43g tape & reel 1.0% as431brtr-e1 as431brtr-g1 e43h g43h tape & reel g1: green bcd semiconductor's pb-free prod ucts, as designated wi th "e1" suffix in the part numbe r, are rohs compliant. products with "g1" suffix are available in green packages.
data sheet 4 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 parameter symbol value unit cathode voltage v ka 40 v cathode current range (continuous) i ka -100 to 150 ma reference input current range i ref 10 ma power dissipation p d z, r package: 770 mw n, k package: 370 junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c esd (human body model) esd 2000 v parameter symbol min max unit cathode voltage v ka v ref 36 v cathode current i ka 1.0 100 ma operating ambient temperature range t a -40 125 o c recommended operating conditions note 2: stresses greater than those listed under "abs olute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operat ion of the device at these or any other conditions beyond those indicated under "recommended operating conditions " is not implied. exposure to "absolute maximum ratings" for extended periods ma y affect device reliability. absolute maximum ratings (note 2)
data sheet 5 dec. 2012 rev. 2. 6 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 parameter test circuit symbol conditions min typ max unit reference voltage 0.5% 4 v ref v ka =v ref, i ka =10ma 2.487 2.500 2.512 v 1.0% 2.475 2.500 2.525 deviation of reference voltage over full temperature range 4 v ref v ka =v ref i ka = 10ma 0 to 70 o c 4.5 8 mv -40 to 85 o c 4.5 10 -40 to 125 o c 4.5 16 ratio of change in reference voltage to the change in cathode voltage 5 v ref v ka i ka =10ma v ka = 10v to v ref -1.0 -2.7 mv/v v ka = 36v to 10v -0.5 -2.0 reference current 5 i ref i ka =10ma,r1=10k , r2= 0.7 4 a deviation of reference current over full temperature range 5 i ref i ka =10ma, r1=10k r2= , t a =-40 to 125 o c 0.4 1.2 a minimum cathode current for regulation 4 i ka (min) v ka =v ref 0.4 1.0 ma off-state cathode current 6 i ka (off) v ka =36v, v ref =0 0.05 1.0 a dynamic impedance 4 z ka v ka =v ref , i ka =1 to 100ma, f 1.0khz 0.15 0.5 thermal resistance jc sot-23 135.9 o c/w sot-23-5 135.9 to-92 81.9 sot-89 29.8 electrical characteristics operating conditions: t a =25 o c, unless otherwise specified.
data sheet 6 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 figure 4. test circuit 4 for v ka =v ref figure 5. test circuit 5 for v ka >v ref figure 6. test circuit 6 for i off i off v in v ka electrical characteristics (continued) v in v ka r1 i ka v ref v in v ka i ka r1 r2 v ref v ka =v ref (1+r1/r2)+ i ref *r1 i ref r3
data sheet 7 dec. 2012 rev. 2. 6 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 figure 7. reference voltage vs. ambient temperature figure 8. reference current vs. ambient temperature figure 9. cathode current vs. cathode voltage figure 10. cathode current vs. cathode voltage -60 -40 -20 0 20 40 60 80 100 120 140 2.485 2.490 2.495 2.500 2.505 2.510 reference voltage (v) ambient temperature ( o c) v ka = v ref i ka = 10ma -60 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 r 1 =10k,r 2 =infinite i ka =10ma reference current ( a) ambient temperature ( 0 c) -2-10123 -100 -50 0 50 100 150 cathode current (ma) cathode voltage (v) v ka =v ref t a =25 0 c -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 -200 0 200 400 600 800 cathode current ( a) cathode voltage (v) v ka =v ref t a =25 0 c typical performance characteristics
data sheet 8 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 typical performance ch aracteristics (continued) figure 11. off-state cathode current vs. figure 12. ratio of delta reference voltage to the ambient temperature ratio of delta cathode voltage -40-20 0 20406080100120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 off-state cathode current ( a) ambient temperature ( o c) v ka =36v v ref =0 -40 -20 0 20 40 60 80 100 120 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 v ka =3.5v to 36v v ref / v ka (mv/v) ambient temperature ( o c) figure 13. small signal voltage gain vs. frequency 10 f 8.2k 15k i ka output 242 gnd 1k 10k 100k 1m -10 0 10 20 30 40 50 60 70 voltage gain (db) small signal frequency (hz) t a =25 0 c i ka =10ma
data sheet 9 dec. 2012 rev. 2. 6 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 typical performance ch aracteristics (continued) figure 14. reference impedance vs. frequency 1k 10k 100k 1,000k 0.1 1 10 reference impedance ( ) frequency (hz) i ka =10ma t a =25 o c gnd output 50 1k i ka figure 15. stability boundary conditions vs. load capacitance i ka r1 (10k) r2 150 0 10 20 30 40 50 60 70 80 90 100 10 1 0.1 0.01 0.001 stable stable cathode current (ma) load capacitance ( f) t a =25 o c v ka =v ref v ka = 5v:no oscillation v ka =10v:no oscillation v ka =15v:no oscillation
data sheet 10 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 typical performance ch aracteristics (continued) figure 16. pulse response of input and output voltage pulse generator f=100khz 220 50 output gnd 0246 0 1 2 3 4 5 input input and output voltage (v) time ( s) output
data sheet 11 dec. 2012 rev. 2. 6 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 v in v out r1 r2 v ref as431 r3 v in v out r4 r1 r2 v ref r3 as431 i out v in as431 r2 r1 figure 17. shunt regulator figure 18. high current shunt regulator v out =(1+r1/r2)*v ref v out =(1+r2/r3)*v ref i out = v ref /r2 + i ka figure 19. current source or current limit typical application
data sheet 12 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 figure 21. pwm converter with reference figure 20. precision 5v 1a regulator az1117 v in v out adjust 8.2k as431 r1 r2 r3 250 250 5v, 1a pwm controller c1 r1 r2 680 u2 3 4 ps521 c2 2 r3 r4 r5 v out as431 q1 comp vfb typical applicat ion (continued)
data sheet 13 dec. 2012 rev. 2. 6 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 mechanical dimensions to-92(bulk packing) unit: mm(inch) 2.420(0.095) 2.660(0.105) 0.360(0. 014) 0.760(0. 030) 1.600(0. 063) max 12.500(0.492) 15.500(0.610) 1.270(0. 050) typ 3.300(0.130) 3.700(0.146) 4.300(0.169) 4.700(0.185) 1.000(0.039) 1.400(0.055) 4.400(0.173) 4.800(0.189) 3.430(0.135) min 0.320(0.013) 0.510(0.020) 0. 000(0.000) 0. 380(0.015)
data sheet 14 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 mechanical dimens ions (continued) to-92(ammo packing) unit: mm(inch) 4.300(0.169) 4.700(0.185) 1 2.500(0.492) 1 4.500(0.571) 2.540(0. 100 ) ty p 1.270(0. 050 ) typ 0. (0. 015) 0. 550 (0.022 ) 4.400(0. 173 ) 4. 800 ( 0. 189 ) 3. 430(0. 135 ) min 0. 320(0. 013 ) 0 . 510(0. 020) 0. 000(0.000 ) 0. 380(0. 015 ) max 1. 100(0. 043 1. 400(0. 055 ) 3.300(0.130) 3.800(0.150) 1. 600(0. 063) ) 380 2.500(0. 098 ) 4.000 ( 0.157 ) 13.000(0. 512 ) 15.000 ( 0.591 )
data sheet 15 dec. 2012 rev. 2. 6 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 mechanical dimens ions (continued) sot-23 unit: mm(inch) 2.300(0.091) 2.500(0.098) 1.200(0.047) 1.400(0.055) 0.920(0.036) 0.980(0.039) 0.300(0.012) 0.500(0.020) 1.900(0.075)ref 2.800(0.110) 3.000(0.118) 2.0 3.0 0.500(0.020) 0.700(0.028) 1.050(0.041)ref 0.020(0.001) 0.100(0.004) 0.900(0.035) 1.100(0.043) 4 r0.100(0.004) 7.0 7.0 0.550(0.022)ref 0.200(0.008)min 0.100(0.004) gauge plane 0.080(0.003) 0.150(0.006) r0.100(0.004) 0.0 ~ 10.0
data sheet 16 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 dec. 2012 rev. 2. 6 mechanical dimens ions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
data sheet 17 dec. 2012 rev. 2. 6 bcd semiconductor manufacturing limited adjustable precision shunt regulators as431 mechanical dimens ions (continued) sot-89 unit: mm(inch) 45 1.030(0.041)ref 1.550(0.061)ref 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) typ 0.480(0.019) 2.300(0.091) 2.600(0.102) 0.320(0.013) 0.520(0.020) 3 10 2.060(0.081)ref 1.400(0.055) 1.600(0.063) 0.350(0.014) 0.450(0.018) r0.150(0.006) 3 10 1.500(0.059) 0.320(0.013)ref 1.620(0.064)ref 2.210(0.087)ref 0.320(0.013) 0.520(0.020) 1.800(0.071)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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